AP2N10 NMOS SOT23 场效应管 N道
Green Device Available
Super Low Gate ChargeExcellent Cdv/dt effect decline
Advanced high cell density Trenchtechnology
TheAP2N10 is the high cell density trenchedN-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small powerswitching and load switch applications.Themeet the RoHS and Green Productrequirement with full function reliability approved.
联系我时请说明来自志趣网,谢谢!
免责申明:志趣网所展示的信息由用户自行提供,其真实性、合法性、准确性由信息发布人负责。使用本网站的所有用户须接受并遵守法律法规。志趣网不提供任何保证,并不承担任何法律责任。 志趣网建议您交易小心谨慎。