Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 100V 18 mΩ 50A Description TO252 Pin Configuration The AP50N10 is the highest performance trench N- ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The AP50N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.